EAG Laboratories has announced the launch of a new laboratory in China dedicated to improving materials, products and electronics. Built in Shanghai, this facility brings the advanced imaging and surface analysis expertise and technology to China, providing manufacturers with direct access to scientific expertise in the analysis of physical structures, chemical properties and composition of materials.
The new lab offers advanced microscopy capabilities in TEM (FEI Themis Z) and Dual Beam FIB (Helios G4 HX & UC FIBs). For supporting advanced R&D, the Themis Z aberration corrected TEM is capable of ultra-high energy resolution and ultra-high sub-atomic spatial resolution for imaging and chemistry (EDS & EELS). These state-of-the art tools, along with EAG’s specialized team of highly trained and qualified staff can apply these techniques to the most complex investigations involving materials and electronic products.
In addition, the new lab broadens EAG Shanghai’s capabilities in Secondary Ion Mass Spectrometry (SIMS). SIMS is a very powerful technique for dopant characterization, contamination measurement, dielectric film analysis, etc. We have installed a new PHI ADEPT 1010 SIMS tool which is optimized for high depth resolution analysis of semiconductors, thin films and bulk insulators. Applications range from ultra-low energy ion implants in Si to dopants in compound semiconductors to gate dielectrics to glass surface corrosion.